device characteristic

英 [dɪˈvaɪs ˌkærəktəˈrɪstɪk]

美 [dɪˈvaɪs ˌkærəktəˈrɪstɪk]

网络  设备特性

网络

英英释义

noun

• any measurable property of a device measured under closely specified conditions
  Synonym:characteristic

双语例句

• Based on study, measurement and analysis of device noise power-spectrum, a fault-location approach that took advantage of device noise-characteristic and combined it with circuit theory was first proposed.
  在研究、测试、分析器件噪声功率谱的基础上，利用器件噪声的特性，结合电路理论，首次提出对故障组件内的故障元件进行测试定位和比较放大器输入端电阻阻值大小的研究方法。
• On the foundation of the existing test equipment, we have researched and developed the test system that can measure liquid crystal material structure parameter and liquid crystal device characteristic.
  在现有液晶测试设备基础上，研发了针对液晶材料结构参数和液晶器件显示特性进行测量的测试系统。
• The impact of gate-leakage current on device characteristic becomes obvious with the continuous scaling of MOSFETs.
  随着MOSFET尺寸的不断减小，栅漏电流对器件特性的影响日益明显。
• The Application of CAD Technique in the Microelectronic Technology Design and Device Characteristic Analyses
  CAD技术在微电子工艺设计及器件特性分析中的应用
• The IC processing and device characteristic CAD system are very important parts in the microelectronic CAD system.
  集成电路工艺及器件特性计算机辅助设计系统是微电子CAD系统的重要组成部分。
• Laser diode ( LD) is a current injected device whose characteristic and life are greatly dependent on the performance of LD-used current supply.
  半导体激光器（LD）是一种电流注入式电致发光器件，其工作特性和使用寿命主要取决于驱动电流源的性能优劣。
• This paper analyzes the influence of the test device cycling characteristic for fluid dynamic characteristic on the pulsation pressure measurement in seawater pipeline system.
  分析了流体动态特性实验台架本身的自循环特性对海水管路系统中脉动压力测量的影响。
• On the basis of device characteristic model, a gamut mapping algorithm is provided based on BP neural network theory.
  在建立设备模型的基础上，提出了基于BP神经网络的色域匹配方法。
• Based on the systematic and detailed analysis on the correlation between material structure parameters and device characteristic parameters, the design principle and design method on RTD material structure were established. And the MBE material structure on RTD for SI-GaAs substrate was designed by this design method.
  在系统细致分析RTD材料结构参数与器件特性参数关系的基础上，确立了RTD材料结构的设计原则和设计方法，并对以SI-GaAs为衬底的RTD分子束外延（MBE）材料生长结构进行了设计。
• The systematic theory has always been absent for the high voltage thyristor valve series, and the device characteristic is often neglected.
  高压晶闸管阀的串联应用一直缺少系统化的理论指导，也常常忽略了器件本身的物理特性。